P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov
X-ray diffraction, scanning electron microscopy, and IR reflectance spectroscopy were used to
study properties of epitaxial low temperature hydride MOCVD AlGaAs/GaAs (100) heterostructures. It was
found that the variation in the AlGaAs alloy lattice’s parameter with Al content does not obey the...
ISSN 10637826, Semiconductors, 2009, Vol. 43, No. 12, pp. 1610–1616. © Pleiades Publishing,...